Ka-band monolithic GaAs PHEMT circuits for transceiver applications

Abstract

This paper presents the development of Ka-band circuits for transceiver applications including a low noise amplifier (LNA), a medium power amplifier (PA), a voltage-controlled oscillator (VCO), and a mixer. These monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-/spl mu/m pseudomorphic (PM) GaAs-based HEMT technology, carried out by commercially available foundry. The LNA demonstrated a measured small signal gain of from 30 to 40 GHz of 17 dB and flat gain is observed. The PA showed a measured small signal gain 15 dB at 31 GHz. The VCO demonstrated a measured output power 11 dBm at 34.3 GHz, and mixer has a measured conversion loss 10.5 dB. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production.