Strained 1.3 µm MQW AlGaInAs lasers grownby digital alloy MBE

Abstract

AlGaInAs strained MQW lasers, emitting at 1.3 µm, have been prepared for the first time using a digital alloy approach. 2 µm stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. Infinite length threshold current densities are as low as 140 kA/cm2/quantum well, and T0 values (20–40°C) range from 75–90 K for chip lengths of 375–2375 µm.