Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (1120) sapphire grown by rf-molecular beam epitaxy

Abstract

A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on <italic>a</italic>-plane (112̄0) sapphire substrate <italic>via</italic> rf-plasma molecular beam epitaxy.