A novel analog behavioral IGBT spice macromodel

Abstract

This paper presents a new completely behavioral IGBT macromodel, built with the analog behavioral modeling features of the modern SPICE simulators, in which both the internal power MOSFET and the wide base BJT are modeled with their physically based equations. The device static equations are directly implemented with "in line equation" controlled sources and the nonlinear voltage dependent gate capacitances are analytical or piece-wise-linear approximated with "in-line equation", respectively "look-up table" controlled sources. The temperature dependencies of the model parameters and optionally the self-heating and thermal coupling with adjacent devices are also included. The proposed model considers the conductivity modulated base resistance and the device avalanche breakdown. The parameters extraction algorithm was greatly simplified, as the classic curve fitting was replaced by a direct specification of data-sheets characteristics as model parameters. This new behavioral macromodel gives a high accuracy of static and dynamic IGBTs description, with no convergence problems and with a reasonable analysis time. Moreover it assures the portability to all the modern SPICE like simulators that support the behavioral modeling facilities.