Optical and photoluminescence properties of ZnO_1-xSe_xthin films

Abstract

ZnO(1-x)Se(x) (0≤x≤0.11) thin films have been grown on sapphire (c-Al₂O₃) substrates at the temperature of 350°C by means of the radio-frequency magnetron sputtering technique. The optical transmission, reflectance, and luminescence spectra at room temperature were analyzed. Using the λ-modulation method gives the possibility to reveal the main features of the energy band structure and the nature of the radiative transitions that cause ultraviolet luminescence.