Structural and Electrical Properties of Bi[sub 6]Ti[sub 5]TeO[sub 22] Thin Films Grown on Pt/Ti/SiO[sub 2]/Si Substrate

Abstract

(BTT) thin films were well formed on a substrate using radio frequency magnetron sputtering. The dielectric constant of the BTT films grown at room temperature was relatively high, approximately 54, and increased with increasing growth temperature to reach a maximum value of 107 for the film grown at . In particular, the 120 nm thick BTT films grown at showed high -values of 63–69 with a low dissipation factor due to the presence of the small BTT crystals . The leakage current density of this film was very low, approximately , at 3 V. Therefore, the BTT film grown at low temperatures is a promising candidate material for metal–insulator–metal capacitors which require low processing temperatures.