On-wafer calibration techniques for giga-hertz CMOS measurements

Abstract

This paper presents five different methods for performing on-wafer calibration of RF CMOS measurements. All methods are compatible with standard CMOS technology. A comparison of method performance up to 12 GHz is made with measurements on RF CMOS devices. The results verify that substrate and metallization losses must be considered to obtain high accuracy. Fixture design issues are discussed and a method for mitigating overestimation of DUT performance is suggested.