A 50 GHz implanted base silicon bipolar technology with 35 GHz static frequency divider

Abstract

A 0.5 /spl mu/m silicon bipolar technology for mixed digital/analogue RF applications is presented. Very steep base profiles are realized by ion implantation and subsequent base diffusion. Cut-off frequencies and maximum oscillation frequencies of 50 GHz and ECL gate delay of 16 ps are obtained without increasing the process complexity in comparison to a 0.8 /spl mu/m production technology. A static 2:1 frequency divider operates up to 35 GHz, the highest value reported for any silicon based technology.