2002 · 25 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower DividersRadio-frequency Integrated CircuitsBipolar TechnologyIon Implantation EffectsMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsRadio-frequency Integrated Circuit DesignRf Cmos DesignSilicon Germanium Bipolar TransistorSilicon Microwave Integrated Circuits
A 0.5 /spl mu/m silicon bipolar technology for mixed digital/analogue RF applications is presented. Very steep base profiles are realized by ion implantation and subsequent base diffusion. Cut-off frequencies and maximum oscillation frequencies of 50 GHz and ECL gate delay of 16 ps are obtained without increasing the process complexity in comparison to a 0.8 /spl mu/m production technology. A static 2:1 frequency divider operates up to 35 GHz, the highest value reported for any silicon based technology.