A 650 V/150 A enhancement mode GaN-based half-bridge power module for high frequency power conversion systems

Abstract

Over the past decade, wide bandgap power devices have demonstrated superior electrical and thermal characteristics over Si-based devices at not only the die level but also when integrated into systems. In this paper, a high current 650 V GaN-based power module is presented for high frequency, high power conversion systems. The design and key features of the GaN-based power module are discussed. Both the thermal and electrical characteristics of the GaN-based power module were modeled to estimate the junction-to-case thermal resistance, power loop inductance, and power loop resistance. In addition, the on-state curves, on-resistance, and drain leakage were measured as a function of temperature. The dynamic characteristics were measured to evaluate the fidelity of the transient voltage and current waveforms, switching speeds, and estimate the switching energy losses.