Vapor Phase Epitaxial Growth of MgO · Al2 O 3

Abstract

An Si on on Si double heterostructure material for integrated circuits has been developed. The epitaxial layer on Si was grown by using an open‐tube vapor phase transport technique. The electron Hall mobility and the defect density of the Si active layer on epitaxially grown were and , respectively, when the Si thickness was 8 μm and the doping concentration was . The growth conditions of epitaxial layers and the characteristics of the Si active layers are presented.