AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 µm

Abstract

The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0–2.1 µm spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 µm detectivity of 3.9×1011 cmHz1/2/W was obtained at −20°C, which is equivalent to a noise-equivalent-power of 4.6×10−14 W/Hz1/2.