PO 2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+δ thin films

Abstract

Giant resistance switching behavior in mixed conductive (LaBa)Co2O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2/96% N2 to oxygen at temperature range of 400–780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa)Co2O5+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.