Publication | Closed Access
The 3rd generation IGBT toward a limitation of IGBT performance
45
Citations
6
References
2002
Year
Unknown Venue
EngineeringVlsi DesignThird-generation IgbtPower Electronics ConverterPower Electronic SystemsPower ElectronicsConventional Igbt ModulesHigh Voltage EngineeringElectronic EngineeringIgbt PerformancePower Electronic DevicesElectrical EngineeringBias Temperature InstabilityPower Semiconductor DeviceComputer EngineeringMicroelectronicsPower DevicePower InverterGeneration Igbt
The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of about 1.7 V and a fall-time of about 150 ns during inductive-load turn-off, which is very close to the limit of IGBT performance predicted by numerical simulation. The device has overcurrent protection, and an average short circuit withstand capability of 30 mu s was obtained. An almost 40% reduction in the switching loss has been realized, as compared with conventional IGBT modules, for a PWM (pulse width modulated) inverter application.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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