Modeling finger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80nm gate length

Abstract

We have modeled the as-measured and de-embedded NF/sub min/ on multi-fingers 0.13 /spl mu/m node MOSFET. In contrast to the as-measured large NF/sub min/ value and strong dependence on parallel gate fingers, the de-embedded NF/sub min/ has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NF/sub min/, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NF/sub min/ to 10 GHz, the weak dependence of intrinsic NF/sub min/ on gate finger is due to the combined effect of R/sub g/g/sub m/ and drain hot carrier noise but both have weak dependence on finger numbers.