Short channel field-effect transistors from ultrathin GaTe nanosheets

Abstract

The emergence of 2D layered materials provides a route for MOSFETs limited by short channel effects (SCEs). In this work, we investigate short channel transport behavior in ultrathin GaTe-based MOSFETs with channel lengths ranging from 1 μm down to 50 nm and then reveal the onset of SCEs in GaTe MOSFETs. Moreover, electrical transport measurements as a function of temperature dependence and gas absorption were conducted to modulate the SCEs. In addition, the behavior of GaTe MOSFETs was suppressed, evidently, by decreasing dielectric thickness. Our research provides the experimental groundwork for future applications of MOSFETs based on layered materials.