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Epitaxial Growth of Al[sub 2]O[sub 3] on Al[sub 2]O[sub 3] Substrates by Chemical Vapor Deposition
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1971
Year
Aluminium NitrideEngineeringCrystal Growth TechnologyChemistryTemperature RangeChemical DepositionPolycrystalline SubstratesMolecular Beam EpitaxyEpitaxial GrowthCrystal FormationMaterials EngineeringMaterials ScienceMicrostructureNet Chemical ReactionSurface ScienceApplied PhysicsCondensed Matter PhysicsChemical KineticsChemical Vapor Deposition
The growth of on single‐crystal and polycrystalline substrates via the net chemical reaction was investigated in the temperature range from 1400° to 1600°C. Deposits that were obtained varied from polycrystalline at lower temperatures to single crystal at higher temperatures. Use of a 60° oriented substrate resulted in a higher quality, faster growing deposit compared to deposits on 0° and 90° oriented substrates.