Crystal Structure and Electrical Properties of Epitaxial BiFeO₃ Thin Films Grown by Metal Organic Chemical Vapor Deposition

Abstract

BiFeO 3 thin films with various thicknesses were grown on (100) c SrRuO 3 ∥(100)SrTiO 3 substrates at 620°C by metalorganic chemical vapor deposition (MOCVD) for the first time. X-ray diffraction analysis revealed cube-on-cube epitaxial growth of phase-pure BiFeO 3 films with (001) orientation irrespective of the film thickness. Out-of-plane lattice parameter decreased with increasing the film thickness up to 100 nm, however this change with the film thickness became small above this thickness. The well saturated hysteresis loops with the remanent polarization and the coercive field values of 51 µC/cm 2 and 166 kV/cm, respectively were obtained at 80 K up to 400 kV/cm for the 480-nm-thick film.