Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures

Abstract

We studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/ LaNiO3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows JSC ∼ 32 μA/cm2 and VOC ∼ 0.04 V, which increase to maximum value of JSC ∼ 303 (−206) μA/cm2 and VOC ∼ −0.32 (0.26) V after upward (downward) poling at ±8 V. We believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.