Electrically Driven Spin Resonance in Silicon Carbide Color Centers

Abstract

We demonstrate that the spin of optically addressable point defects can be coherently driven with ac electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of GHz-frequency electric fields, and the characterization of defect spin multiplicity. We control defect ensembles in SiC, but our methods apply to spin systems in many semiconductors, including the diamond nitrogen-vacancy center. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.