Dielectric relaxation of atomic-layer-deposited HfO2 thin films from 1kHzto5GHz

Abstract

The dielectric relaxation of HfO2 thin films grown by atomic-layer deposition (ALD) was studied as a function of frequency from 1kHzto5GHz. The dielectric relaxation of the ALD HfO2 films followed a power-law dependence known as the Curie–von Schweidler relaxation law both in the kHz and GHz ranges, and the relaxation exponents were consistent with the measured dielectric losses. The behavior of the dielectric response for the HfO2 thin films may be attributed to defect sites in the HfO2 layer and∕or interface.