Fatigue suppression of ferroelectric Pb1−xBax(Zr0.52Ti0.48)O3 thin films prepared by sol-gel method

Abstract

The polarization fatigue behavior of ferroelectric Pb1−xBax(Zr0.52Ti0.48)O3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated. The fatigue endurance is significantly enhanced upon Ba doping and almost fatigue-free performance up to 1010 switching cycles for PBZT (x=0.1) thin films are observed at room temperature. It is revealed that Ba doping up to x=0.1 results in a 70% decrease of oxygen vacancies in the films. The improved fatigue endurance is attributed to the enhanced oxygen ion stability and suppressed oxygen vacancies.