Si/B_4C narrow-bandpass mirrors for the extreme ultraviolet

Abstract

We report the results of extreme-ultraviolet reflectance measurements and structural characterization of multilayer mirrors made by sequential sputter deposition of Si and B(4)C. Compared with Si/Mo multilayers, Si/B(4)C have a much narrower bandpass (deltalambda) and better off-peak rejection but lower peak reflectance (R(0)). Mirrors with three different designs gave the following results: R(0) = 0.275 and deltalambda = 0.31 nm at 13.1 nm and normal incidence; R(0) = 0.34 and deltalambda = 1.1 nm at 18.2 nm and 45 degrees ; and R(0) = 0.30 and deltalambda = 2.0 nm at 23.6 nm and 45 degrees . These multilayers exhibited excellent stability on annealing at temperatures up to 600 degrees C.