Multifunctional characteristics of BaNb0.3Ti0.7O3∕Si p-n junctions

Abstract

BaNb 0.3 Ti 0.7 O 3 ∕ Si p-n junction combining the functional properties of oxide and Si electronics was fabricated by laser molecular-beam epitaxy, and the multifunctional properties of rectification, ferroelectricity and photoelectricity were experimentally studied. The good rectifying I-V characteristics, nanosecond ultrafast photoelectric effect, and ferroelectric property due to the interface enhancement were observed experimentally. The mechanisms of ferroelectric behavior and photoelectric process are discussed briefly.