Applied Physics Letters · 2006 · 82 citations · 18 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsSolid State PhysicsThin FilmsEpitaxial GrowthMagnetic Properties Of SolidsStacking FaultsThin Film AnnealingThin Film Magnetic PropertiesX-ray CrystallographyDensityDiffraction PatternsDiffraction Signatures Of Stacking FaultsStacking Fault EffectsStacking Fault FormationTextured MaterialsX-ray Diffraction AnalysisYttrium Barium Copper Oxide Films
The density n of stacking faults (SFs) in epitaxial YBa2Cu3O7−x (Y123) films, consisting of extra CuO planes, is measured by fitting x-ray diffraction patterns using a random stacking model. The SF density is n=0.068nm−1 in films grown by metal-organic deposition on textured templates and optimized for high Ic. The presence of SF is correlated with pinning of magnetic field (H) applied in the Y123 ab plane. SF can be nearly eliminated by a high temperature anneal, or by adding excess Dy, resulting in Ic which is nearly independent of the orientation of H.
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