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Detection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films
212
Citations
17
References
2011
Year
Materials ScienceMaterials EngineeringIi-vi SemiconductorEpitaxial GrowthEngineeringZnse Secondary PhaseSurface ScienceApplied PhysicsCondensed Matter PhysicsThin Film Process TechnologyChemistryThin FilmsZnsnse 4Cztse ModesMolecular Beam EpitaxyCu 2Chemical Vapor DepositionThin Film Processing
Cu 2 ZnSnSe 4 (CZTSe) thin films are grown by coevaporation. Composition depth profiles reveal that a Zn rich phase is present at the CZTSe/Mo interface. Raman measurements on the as grown films are used to study the near surface region and the CZTSe/Mo interface, after mechanically removing the thin film from the Mo coated glass. These measurements provide direct experimental evidence of the formation of a ZnSe phase at the CZTSe/Mo interface. While the Raman spectra at the surface region are dominated by CZTSe modes, those measured at the CZTSe/Mo interface are dominated by ZnSe and MoSe2 modes.
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