Ultraviolet photovoltage characteristics of SrTiO3−δ∕Si heterojunction

Abstract

A photovoltaic effect is observed in the heterostructure of p-Si∕n-SrTiO3−δ (p: hole carrier type, n: electron carrier type). The current–voltage curve exhibits a good rectifying characteristic similar to that of the traditional diode. The junction shows the open circuit voltage of 126mV∕mJ, the short circuit current of 1.78mA∕mJ, and the response time faster than 10ns for ultraviolet pulsed laser of 25ns in duration at room temperature, suggesting the promising potential of this junction as a new type of ultrafast ultraviolet detectors with high sensitivity for application.