Infrared optical properties of LaNiO3–platinized silicon and PbZrχTi1−χO3–LaNiO3–platinized silicon heterostructures

Abstract

Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)–Ti–SiO2–Si substrates are obtained in the 2.5–12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650 °C. At the same time, the infrared optical properties of PbZrχTi1−χO3(PZT) thin films with χ=0.3 and 0.5 on LaNiO3–Pt–Ti–SiO2–Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni–PZT–LaNiO3–Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors.