Self-aligned TiSi2∕Si heteronanocrystal nonvolatile memory

Abstract

The titanium silicide/silicon (TiSi2∕Si) heteronanocrystals are fabricated on SiO2 thin films. The metal-oxide-semiconductor structure embedding the TiSi2∕Si heteronanocrystals shows superior performance over the Si dot device. The charge loss rate in the TiSi2∕Si heteronanocrystal device is 7.5 times less than that of the Si dot device. It is also found that the TiSi2∕Si heteronanocrystal device has wider memory window than the Si dot counterpart.