Rectifying I-V characteristic of LiNbO3∕Nb-doped SrTiO3 heterojunction

Abstract

Li Nb O 3 ∕ Nb -doped SrTiO3 heterojunction was fabricated by pulsed laser deposition. The current-voltage curve of this heterojunction shows good rectifying property and changes with temperature dramatically. For the forward bias, the conduction mechanism changes from Ohmic-like for the low bias voltages to space charge limited current for the high bias voltages. While for the reverse bias, it changes from Schottky emission to avalanche breakdown with increasing bias voltage. The results were explained by considering the band structures of the junction. This work demonstrates that ferroelectric materials, combined with other oxides, can lead to some interesting property which may have potential applications.