Identification of interfacial and bulk effects in modulating fatigue behaviors of Pb(Zr0.52Ti0.48)O3 thin films

Abstract

The polarization fatigue behaviors of Pt∕LaNiO3∕Pb(Zr0.52Ti0.48)O3∕LaNiO3∕Pt (Pt/LNO/PZT/LNO/Pt) and Pt/PZT/Pt structures under different temperatures T, voltages Vamp, and frequencies f are investigated in order to clarify defect-related interfacial and bulk effects. The fatigue endurance of the Pt/LNO/PZT/LNO/Pt structure is enhanced at higher T, larger Vamp, and lower f, whereas for the Pt/PZT/Pt structure a better antifatigue performance is obtained at lower T, smaller Vamp, and higher f. The defect chemistry as one of the origins of the switching fatigue is demonstrated by the predominant interfacial effect and bulk effect resulting in two types of markedly opposite fatigue responses.