Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1−x)MnxTe

Abstract

We report on the molecular-beam epitaxial growth and magnetotransport properties of p-type BeMnTe, a ferromagnetic diluted magnetic semiconductor. BeMnTe thin-film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10%. A high p-type doping with nitrogen can be achieved by using a rf plasma source. BeMnTe and BeTe layers have been characterized by magnetotransport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5 K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase.