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Mn-doped V2VI3 semiconductors: Single crystal growth and magnetic properties

55

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13

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2005

Year

Abstract

We have grown Mn-doped V2VI3 single crystals using the temperature gradient solidification method. We report on the structural and magnetic properties of Mn-doped Bi2Te3, Sb2Te3, Bi2Se3, and Sb2Se3 compound semiconductors. The lattice constants of several percent Mn-doped V2VI3 were slightly smaller than those of the undoped V2VI3 due to the smaller Mn atomic radius (1.40Å) than those of Bi (1.60Å) and Sb (1.45Å). Mn-doped Bi2Te3 and Sb2Te3 had ferromagnetic ordering at TC=10 and 17K, respectively. However, Mn-doped Bi2Se3 and Sb2Se3 showed spin glass and paramagnetic properties, respectively.

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