Piezoelectrically induced resistance modulations in La0.7Sr0.3MnO3∕Pb(Zr,Ti)O3 field effect devices

Abstract

Epitaxial ferroelectric-ferromagnetic field effect devices of PbZr0.52Ti0.48O3∕La0.7Sr0.3MnO3 (PZT∕LSMO) with narrow manganite channels (⩽7nm) show butterflylike hysteretic resistance modulations (ΔR) which are commensurate with strain variation from inverse piezoelectric effect of PZT. Based on the type of observed resistance hysteresis loops, contributions from electric field effect and strain effect have been distinguished for devices with varied channel thickness. The strain-induced ΔR decreases with increasing channel thickness. The ΔR from field effect is low in the LSMO channels with 30% Sr doping.