Electroluminescence of β-FeSi₂ Light Emitting Devices

Abstract

Ion beam synthesised β-FeSi 2 light emitting devices have been fabricated by ion implantation of iron into pre-grown abrupt silicon p–n junctions. Several samples were fabricated by varying the implant conditions and the junction characteristics (layer thickness and doping concentration). Light emission at ∼1.5 µm was obtained from all devices but the intensity decreased with increasing temperature. The electroluminescence quenching was found to depend on both the iron implant conditions and the characteristics of the p–n junction.