Junction characteristics of SrTiO3 or BaTiO3 on p-Si (100) heterostructures

Abstract

The authors report the fabrication of p-n junctions, consisting of n-type SrTiO3 or BaTiO3 and p-type Si substrates, by the pulsed-laser deposition technique. The BaTiO3∕Si junction exhibits excellent rectifying behavior and significantly reduced leakage current at 300K exceeding breakdown voltage of −25V with leakage current <0.5μA, while SrTiO3∕Si with an interfacial layer shows moderate junction characteristics. It was demonstrated that the BaTiO3∕Si grown at an optimum growth temperature of 650°C displayed superior performance which is promising for electronic devices. Both junctions show photocurrent at 300K due to electron injection following the photoexcitation of n-type perovskite.