Polycrystalline thin-film Cu2−<i>x</i>Se/CdS solar cell

Abstract

The development of a polycrystalline thin-film solar cell utilizing a backwall designed heterojunction structure based upon p-type Cu2−xSe and n-type CdS semiconductor materials is described. The electrical, optical, and structural properties of the deposited thin-film materials are described. A device efficiency of 5.38% under simulated AM1 illumination is reported.