Journal of Applied Physics · 2008 · 27 citations · 11 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials ChemistryMaterials PhysicsElectrical ConductivityElectronic Material CharacterizationHeat ConductionThermal Properties Of MaterialsThermal Properties Of SemiconductorsThermoelectric MaterialsCarrier ConcentrationEffective MassElectrical ResistivityFigure Of Merit EnhancementHalf-heusler CompoundsPolycrystalline MaterialsThermoelectric Figure Of MeritThermoelectric Properties
The authors conducted thermoelectric characterizations on polycrystalline samples of ErNi1−xPdxSb (x=0.25, 0.5, and 0.75) to develop p-type half-Heusler thermoelectric materials. All samples prepared here indicated positive Seebeck coefficient (S) values. Variations of the electrical resistivity (ρ) and the S of ErNi1−xPdxSb with x were examined by collecting the carrier concentration, mobility, and density-of-state effective mass. The thermal conductivities (κ) of ErNi1−xPdxSb were approximately one-half of those of ErNiSb and ErPdSb, mainly due to an alloy scattering effect between Ni and Pd. With the alloying of ErNiSb and ErPdSb, the thermoelectric figure of merit ZT (=S2T∕ρκ) was enhanced; the maximum ZT value was 0.29 at 650K, obtained in the composition ErNi0.5Pd0.5Sb.
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Holey and Unholey Semiconductors
Terry M. Tritt · Science · 1999 · 727 citations
Natural Sciences, Materials Engineering, Materials Science +17
Transport properties of pure and doped<i>M</i>NiSn (<i>M</i>=Zr, Hf)
Ctirad Uher, Jiong Yang, Siqing Hu et al. · Physical review. B, Condensed matter · 1999 · 625 citations