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Fabrication and electrical properties of (111) textured (Ba0.6Sr0.4)TiO3 film on platinized Si substrate
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Citations
22
References
2007
Year
EngineeringThin Film Process TechnologySilicon On InsulatorElectrical PropertiesTi Adhesion LayerPlatinized Si SubstrateMagnetron SputteringTio3 FilmThin Film ProcessingMaterials ScienceMaterials EngineeringDielectric ConstantCrystalline DefectsOxide ElectronicsSemiconductor MaterialSemiconductor Device FabricationMaterial AnalysisSurface ScienceApplied PhysicsThin Films
The authors report the fabrication of (Ba0.6Sr0.4)TiO3 (BST) film on Pt∕Si(001) substrate without Ti adhesion layer by magnetron sputtering. X-ray diffraction technique is used to characterize the orientation and phase purity of BST/Pt heterostructure. It is found that both BST and Pt films are (111) textured. The (111) BST films are observed to have high tunability of 49.4%; the dielectric constant and dielectric loss of the BST film are about 682 and 0.015, respectively. The leakage current density of BST film agrees well with the space-charge-limited current theory at room temperature and is only 3.90×10−8A∕cm2 at 455kV∕cm.
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