Zero-field spin splitting in AlxGa1−xN/GaN heterostructures with various Al compositions

Abstract

The zero-field spin splitting in AlxGa1−xN/GaN heterostructures with various Al compositions has been investigated at low temperatures and high magnetic fields. The zero-field spin-splitting energy and the spin-orbit coupling parameter are obtained by means of beating pattern Shubnikov–de Haas measurements. It is found that the spin-orbit coupling parameter can be tuned by the polarization-induced electric field. The AlxGa1−xN/GaN heterostructure is one of the promising materials for the spin-polarized field effect transistor.