ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diodelasers of highCW power and ‘wallplug’ efficiency

Abstract

A 2.85 W CW output, front-facet-emitted power and 54% maximum CW power conversion efficiency have been obtained from aluminum-free, InGaAs/InGaAsP/InGaP optimised-facet-coated, wide-stripe (100 µm) diode lasers emitting at 950 nm. Half-wave ZnSe layers, deposited on the laser facets prior to applying low/high reflectivity (LR/HR) dielectric coatings, increase the maximum CW optical power by 50%. The power conversion efficiency decreases by only 25% of its maximum value as the CW power increases from 0.75 to 2.85 W.