Electronics Letters · 1996 · 20 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor LasersFacet CoatingsHigh-power Laser DiodesHigh-power Semiconductor LasersPower ConversionPower Conversion EfficiencyPower EfficiencyReflectivitySemiconductor Laser Diodes
A 2.85 W CW output, front-facet-emitted power and 54% maximum CW power conversion efficiency have been obtained from aluminum-free, InGaAs/InGaAsP/InGaP optimised-facet-coated, wide-stripe (100 µm) diode lasers emitting at 950 nm. Half-wave ZnSe layers, deposited on the laser facets prior to applying low/high reflectivity (LR/HR) dielectric coatings, increase the maximum CW optical power by 50%. The power conversion efficiency decreases by only 25% of its maximum value as the CW power increases from 0.75 to 2.85 W.
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Gain characteristics of strained quantum well lasers
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Ion-exchanged Er/Yb waveguide laser at 1.5 µmpumped by laser diode
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