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Charge in SiO[sub 2]-Al[sub 2]O[sub 3] Double Layers on Silicon
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1973
Year
EngineeringConstant Voltage DropThin Film Process TechnologyChemical DepositionSilicon On InsulatorSemiconductor DeviceCharge Carrier TransportNegative ChargeThin Film ProcessingMaterials ScienceSemiconductor TechnologyPhysicsInsulator‐insulator InterfaceSemiconductor MaterialSemiconductor Device FabricationSurface ScienceApplied PhysicsThin FilmsElectrical Insulation
The negative charge in double layers was found to be located at the insulator‐insulator interface. This charge is independent of the thickness of the and inversely dependent on the thickness. Evidence for a constant voltage drop across the during deposition was found for polycrystalline , N2‐deposited and O2‐deposited amorphous . It is suggested that the traps at the interface are due to oxygen vacancies.