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Resistive switching effect in SrTiO3−δ∕Nb-doped SrTiO3 heterojunction
85
Citations
15
References
2007
Year
Oxide HeterostructuresMaterials ScienceElectrical EngineeringElectronic DevicesSemiconductorsSrtio3−δ∕nb-doped Srtio3 HeterojunctionsEngineeringSemiconductor TechnologyOxide ElectronicsApplied PhysicsSemiconductor MaterialOptoelectronic DevicesSrtio3−δ∕nb-doped Srtio3 HeterojunctionSwitching EffectSemiconductor DeviceCurrent-voltage Curves
The authors report on the fabrication and properties of SrTiO3−δ∕Nb-doped SrTiO3 heterojunctions. The current-voltage curves of these junctions show hysteresis and remarkable resistive switching behavior. Hysteresis was also observed in the capacitance-voltage curves of these junctions. Upon applying voltage pulses, the resistance of the heterojunctions can be switched between different states and the relaxation of the junction current after switching follows the Curie–Von Schweidler law. The results were discussed by considering the role of defects in the interfacial depletion region of the heterojunctions. This work indicates that heterojunctions composed of two oxides can also show the switching effect, which is useful for applications.
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