Publication | Open Access
Phosphorescence of red Os(fptz)2(PPh2Me)2 doped organic light-emitting devices with n and p hosts
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Citations
8
References
2006
Year
Optical MaterialsP HostsEngineeringOptoelectronic DevicesChemistryLuminescence PropertySemiconductorsChemical EngineeringPhosphorescence ImagingLight-emitting DiodesPhosphoreneThermally Activated Delayed FluorescencePhotophysical PropertyCompound SemiconductorCharge Carrier TransportRed OsPhotochemistryOptoelectronic MaterialsP-type HostOrganic Light-emitting DevicesN-type BisWhite OledApplied PhysicsAluminum HostOptoelectronicsPhosphorescence
We have applied a stericly-hindered red phosphorescent dopant Os(fptz)2(PPh2Me)2 [fptz=3-trifluoromethyl-5-(2-pyridyl)-1,2,4-triazole, PPh2Me=phosphine ligand] in p-type 4,4′-N,N′-dicarbazole-biphenyl or n-type bis(2-methyl-8-quinolinolato)(p-phenylphenolato) aluminum host and found that the latter produced higher luminance efficiency at lower doping concentration. We present a model to rationalize this phenomenon in which the n-type host impedes hole transport, which leads to narrower recombination zone near the hole transport layer/emission layer interface than the p-type host, hence, more effective recombination.
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