Publication | Closed Access
Optical properties of the ZnSe1−xTex epilayers grown by molecular beam epitaxy
38
Citations
14
References
1998
Year
Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsSubstrate Tilt AngleIi-vi SemiconductorElectronic DevicesOptical PropertiesMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorZnse1−xtex EpilayersExciton BoundMaterials ScienceElectrical EngineeringPhotoluminescenceOptoelectronic MaterialsTe-bound ExcitonApplied PhysicsOptoelectronics
ZnSe 1− x Te x epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1−xTex epilayers was found to increase with the Te concentration.
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