Publication | Closed Access
The UHF oscillators based on a HEMT structure with negative conductivity
16
Citations
2
References
2015
Year
Unknown Venue
Microwave Oscillator ParametersElectrical EngineeringEngineeringRf SemiconductorPhysicsOscillatorsHigh-frequency DeviceNonlinear CircuitRadio FrequencyNegative ConductivityUhf OscillatorsMicrowave EngineeringRf SubsystemTransistor StructureHemt StructureElectromagnetic Compatibility
The article considers a possibility of constructing microwave oscillators on a transistor structure with negative conductivity based on two HEMT. Obtained non-linear equations can be used to model microwave oscillator parameters and characteristics with an error not more than 10%.
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