Near-band gap optical behavior of sputter deposited α- and α+β-ZrO2 films

Abstract

The functional dependence of the optical absorption coefficient on photon energy in the 4.9–6.5 eV range was determined for α- and α+β-ZrO2 films grown by reactive sputter deposition on fused silica. Two allowed direct interband transitions in α-ZrO2 were identified, with energies equal to 5.20 and 5.79 eV. Modification of these transitions in α+β-ZrO2 is reported.