Lead iodide perovskite light-emitting field-effect transistor

TLDR

Hybrid organic–inorganic perovskites are widely used in photovoltaics and LEDs, yet their intrinsic charge‑transport parameters remain elusive due to variability in film preparation and device history. Lowering the operating temperature of CH₃NH₃PbI₃ field‑effect transistors suppresses ionic screening, boosting carrier mobility by nearly two orders of magnitude below 200 K, and enabling gate‑dependent electroluminescence that follows the tetragonal‑to‑orthorhombic phase transition, thereby providing intrinsic transport data that can guide material and device optimization and inspire new electro‑optic concepts.

Abstract

Abstract Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH 3 NH 3 PbI 3 ) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH 3 NH 3 PbI 3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.