1985 · 22 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignIntegrated Circuit DesignMemory DevicesArray RedundancyMemory Circuit DesignNon-volatile Memory Design
A 64Kw x 1b bipolar ECL RAM with two-array redundancy will be described. This device using a PNP load cell, was fabricated in IOP-II (second generation of Isolation by Oxide and Polysilicon) and 1.2μ lithography.