Concepedia

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Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM

60

Citations

0

References

2006

Year

Shunsuke Fukami, K. Nagahara, Norikazu Ohshima, Y. Ozaki, S. Saito, Ryusuke Nebashi, Noboru Sakimura, H. Honjo, K. Mori, C. Igarashi,
Symposium on VLSI Technology

Abstract

We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.