Applied Physics Letters · 2010 · 36 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsThin FilmsMemory DevicesMemristive MaterialsNanoelectronicsNanostructured Electronic MaterialsOxide SemiconductorsThin Film AnnealingAnnealing EffectsAnnealing Temperature EffectsAnnealing Time EffectsOxide Memristive MaterialsResistive SwitchingResistive Switching MaterialsRetention CharacteristicsX-ray Diffraction Analysis
In this paper, the influence of a 600 °C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory.
12
Quantized conductance atomic switch
Kazuya Terabe, Tsuyoshi Hasegawa, Tomonobu Nakayama et al. · Nature · 2005 · 1.2K citations